GDBAS40 Datasheet | GTM

Description Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at TA = 25 Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Thermal Resistance Junction to Ambient Air Peak Forward Surge Current at tp < 1.0s Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM R Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A m W IFSM Io PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300u S) Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF IR CT Trr unless otherwise noted) Min. 40 Typ. Max. 380 1000 200 5.0 5.0 Unit V m V n A p F ns IR=10 A IF1=1m A IF2=40m A VR=30V VR=0V, f=1MHz IF=IR=10m A, RL=100 , Irr=1m A Test Conditions Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/12/20 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Page:...