GDBAS70 Datasheet | GTM

Description ISSUED DATE :2005/12/29 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A The GDBAS70 is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at TA = 25 Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Rectified Current Non- Repetitive Peak Forward Surge Current @ tp Thermal Resistance Junction to Ambient Air Total Power Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V m A m A /W m W Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise noted) Min. 70 Typ. Max. 410 750 1000 100 10 2.0 5.0 n A u A p F ns m V Unit V IR=10 A IF1=1m A IF1=10m A IF2=15m A VR1=50V VR2=70V VR=0V, f=1MHz IF=IR=10m A, RL =100 , Irr=1m A Test Conditions Reverse Leakage Current Total Capacitance Reverse Recover Time IR CT Trr Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/12/29 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung...