DESCRIPTION
S U R F A C E M O U N T, B A N D S W I T C H I N G D I O D E V O LT A G E 3 5 V, C U R R E N T 0 . 1 A FEATURES
Low forward dynamic resistance rf Less voltage dependence of diode capacity CD Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Reverse Voltage(DC) Forward Current(DC) Junction Temperature Storage Temperature Total Power Dissipation Symbol VR IF Tj Tstg PD Ratings 35 100 +125 -55 ~ +150 225 mW Unit V mA ELECTRICAL CHARACTERISTICS
at Ta = 25 Parameter Reverse Breakdown Reverse Current(DC) Reverse Voltage(DC) Diode Capacitance Forward dynamic resistance Symbol VR IR VF CD Min. 35 Typ. 0.01 0.92 0.9 0.65 Max. 100 1 1.2 0.85 Unit V nA V pF IR=10uA VR=33V IF=100mA VR=6, f=1MHz IF=2mA, f=100MHz Test Conditions rf Note 1: Rated input/output frequency: 100MHz 1/2 ISSUED DATE :2005/04/01 REVISED DATE : Characteristics Curve IF - VF CD - VR IR - T a r f - IF rf - f Important Notice: All rights are reserved.
GTM
