GDMBD2004
GDMBD2004 is SWITCHING DIODE manufactured by GTM.
Description
The GDMBD2004 is designed for ultra high speed switching.
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Absolute Maximum Ratings (At TA = 25
Parameter Repetitive Peak Reverse Voltage Continuous reverse voltage RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward surge Current @Tp =1.0us @Tp=1.0s Typical Junction Capacitance between Terminal (Note1) Max. Reverse Recovery Time (Note2) Power Dissipation Thermal Resistance Junction to Ambient Air Operation and Storage Temperature Range unless otherwise specified)
Symbol VRRM VR(VRWM) VR(RMS) IFM IFSM CJ TRR PD R
Ratings 300 240 170 225 4 1 5.0 50 350 357 -65 ~ +150
Unit V V V m A A p F n Sec m W /W
TJ, TSTG
Electrical Characteristics (At TA = 25
Characteristics Reverse Breakdown Voltage Forward Voltage Symbol BVR VF Min. 300 Reverse Current IR
- unless otherwise noted)
Max. 0.85 1 1.25 100 100 Unit V V V V n A u A IR=100u A IF=20m A IF=100m A IF=225m A VR=240V, TA=25 VR=240V, TA=150 and recovery to IRR=-3m A. Test Conditions
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts. 2. Measured at applied forward current of 30m A, reverse current of 30m A, RL=100 3. ESD sensitive product handling required.
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ISSUED DATE :2005/12/23 REVISED DATE :
Characteristics Curve
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