GE40N03 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 40 30 169 50 0.4 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 62 Unit /W /W Page: 1/5 ISSUED DATE :2005/01/25 REVISED DATE :2005/12/12B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 30 1.0 Typ. 0.037 26 14 22 17 3 10 7.2 60 22.5 10 800 380 133 Max. 3.0 ±100 25 250 17 24 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=20A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=20A VGS=4.5V, ID=16A ID=20A VDS=24V VGS=5V VDS=15V ID=20A VGS=10V RG=3.3 RD=0.75 VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage Symbol VSD IS ISM Min. - Typ. - Max. 1.3 40...