GE85T08 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 80 20 75 48 260 138 1.11 450 30 -55 ~ +150 Unit V V A A A W W/ m J A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 0.9 62 Unit /W /W Page: 1/4 ISSUED DATE :2005/03/08 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 80 1.0 Typ. 0.09 70 63 23 38 30 100 144 173 6300 670 350 1.1 Max. 3.0 100 10 100 13 18 100 10080 1.7 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=1m A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=45A VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS VDS=80V, VGS=0 VDS=64V, VGS=0 VGS=10V, ID=45A VGS=4.5V, ID=25A ID=45A VDS=64V VGS=4.5V VDS=40V ID=45A VGS=10V RG=10 RD=0.89 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate...