GEMBR20100CT Datasheet | GTM

Description Features Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Maximum Ratings and Electrical Characteristics at Ta=25 Parameters Max. Recurrent Peak Reverse Voltage Max. RMS Voltage Max. DC Blocking Voltage Max. Average Forward @TC=120 Rectified Current (See Fig.1) Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol GEMBR 2070CT GEMBR 2080CT Ratings GEMBR 2090CT GEMBR 2100CT GEMBR 2150CT Unit V V V V A A V/us 0.75 0.92 0.86 1.00 V m A /W 100 70 100 150 135 150 VRRM VRMS VDC I(AV) IFSM dv/dt VF IR R JC Tj Tstg 70 49 70 80 56 80 90 63 90 20 150 10000 0.75 0.85 0.85 0.95 0.1 100 2.0 -55 ~ +150 -55 ~ +175 Voltage Rate of Charge (Rated VR) IF=10A @TJ=125 Max. Forward IF=10A @TJ=25 IF=20A @TJ=125 Voltage (Note 1) IF=20A @TJ=25 Max. DC Reverse Current @TJ=25 At Rated DC Blocking Voltage @TJ=125 Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range Notes: 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 1/2 ISSUED DATE :2005/08/01 REVISED DATE :2006/12/21C Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or...