GESBL1635CT Datasheet | GTM

Description Features Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Maximum Ratings and Electrical Characteristics at Ta=25 Parameters Max. Recurrent Peak Reverse Voltage Max. RMS Voltage Max. DC Blocking Voltage Max. Average Forward @TC=95 Rectified Current (See Fig.1) Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol VRRM VRMS VDC I(AV) IFSM VF IR R JC Tj Tstg Ratings GESBL 1630CT GESBL 1635CT GESBL 1640CT GESBL 1645CT GESBL 1650CT GESBL 1660CT Unit V V V V A A 0.7 V m A /W 50 35 50 60 42 60 30 21 30 35 24.5 35 40 28 40 16 250 45 31.5 45 Max. Forward Voltage @ 8A (Note 1) Max. DC Reverse Current @TJ=25 At Rated DC Blocking Voltage @TJ=100 Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range Notes: 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 0.55 0.5 50 2.5 -55 ~ +125 -55 ~ +150 1/2 ISSUED DATE :2005/08/01 REVISED DATE :2006/05/23B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu,...