GESD880 Overview
Features NPN EPITAXIAL PLANAR TRANSISTOR The GESD880 is designed for audio frequency power amplifier application. hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A Package Dimensions REF.