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ISSUED DATE :2005/12/12 REVISED DATE :
GESD880
Description Features
NPN EPITAXIAL PLANAR TRANSISTOR
The GESD880 is designed for audio frequency power amplifier application. High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.
GESD880 Datasheet
