FEATURES
NP N E PITAXI AL P L ANAR T RANSI STOR DESCRIPTION
High DC current gain Built-in a damper diode at E-C Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation(Tc=25 ) Symbol Tj Tstg BVCBO BVCEO BVEBO IC PD Ratings +150 -55 ~ +150 100 100 5 5 20 Unit V V V A W ELECTRICAL CHARACTERISTICS
(Rating at 25 Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 5 1 1 Typ. - ambient temperature unless otherwise specified) Max. 10 10 2 2 4 4 2.5 200 Unit V V V A A mA V V V V K K pF Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 IE=1mA, IC=0 VCB=100V, IE=0 VCE=50V, IB=0...
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