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ISSUED DATE :2005/07/25 REVISED DATE :
GI1386
Description Features
PNP EPITAXIAL SILICON TRANSISTOR
The GI1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics
Package Dimensions
TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.
GI1386 Datasheet
