| Part number | GI3310 |
|---|---|
| Datasheet | GI3310_GTM.pdf |
| File Size | 273.69 KB |
| Manufacturer | GTM |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A The GI3310 provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage and battery power applications. Simple Drive Requirement 2.5V Gate Drive Capability.
| Part Number | Description |
|---|---|
| GI3302 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI3303 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI3055 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI3055S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI31C | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI32C | PNP EPITAXIAL PLANAR TRANSISTOR |
| GI3403 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI3669 | PNP EPITAXIAL PLANAR TRANSISTOR |
