GTM GI3403
The GI3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-251 package is universally used for commercial-industrial applications.| Part No. | GI3403 |
|---|---|
| Datasheet | GI3403 Download |
| Manufacturer |  GTM |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200m -10A *Simple Drive Requirement *Lower Gate Charge *Fast SwitchingFEATURES
Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=70 IDM PD @TC=25 Tj, Tstg Ratings -30 ±20 -10 -8.6 -48 36.7 0.29 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 3.4 110 Unit /W /W GI3403 Page: 1/4 ISSUED DATE :2005/02/25 REVISED DATE :ELECTRICAL CHARACTERISTICS
(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -30 -1.0 Typ. -0.1 2 3.8 1.7 1.6 6.7 20.
