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ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B
GI3669
Description Package Dimensions
NPN EPITAXIAL PLANAR T RANSISTOR
The GI3669 is designed for using in power amplifier applications, power switching applications.
TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Dissipation (TA=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Ratings 80 80 5 2 1.
GI3669 Datasheet
