GI4672 Datasheet | GTM

Description Features NPN EPITAXIAL SILICON TRANSISTOR The GI4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50m A Excellent DC current gain characteristics Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse PW=10ms) Total Device Dissipation (TA=25 ) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings 60 50 6 2 5 1.5 10 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - h FE f T Cob Min. 60 50 6 120 Typ. 0.1 210 25 unless otherwise noted) Max. 100 100 0.35 400 MHz p F Unit V V V n A n A V IC=50u A, IE=0 IC=1m A, IB=0 IE=50u A, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=1A, IB=50m A VCE=2V, IC=500m A VCE=2V, IE=500m A, f=100MHz VCB=10V, IE=0, f=1MHz - Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of h FE Rank Range A 120 ~ 240 B 200 ~ 400 Page: 1/2 ISSUED DATE :2005/07/15 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220,...