DESCRIPTION
FEATURES
NPN HIGH SPEED SWITCHING TRANSISTOR Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A High speed switching, typically tf =0.1 s at IC=3A Wide SOA Complements to GI1952 Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 ABSOLUTE MAXIMUM RATINGS
(TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse PW=100ms) Total Device Dissipation (TA=25 ) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings 100 60 5 5 10 1 10 150 -55 ~ +150 Unit V V V A A W W ELECTRICAL CHARACTERISTICS
(TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 fT Cob Min. 100 60 5 120 40 Typ. 0.15 210 80 unless otherwise noted) Max.
GTM
