GTM GI5706
The GI5706 is designed high current switching applications.| Part No. | GI5706 |
|---|---|
| Datasheet | GI5706 Download |
| Manufacturer |  GTM |
| Description | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
NPN EPITAXIAL PLANAR SILICON TRANSISTOR *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80ABSOLUTE MAXIMUM RATINGS
(Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Junction Temperature Storage Temperature Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO 80 VCES 80 VCEO 50 VEBO 6 IC 5 ICP 7.5 IB 1.2 Tj +150 TsTG -55 ~ +150 PD 0.8 PD(TC=25 ) 15 ) Unit Test Conditions Unit V V V V A A A W WELECTRICAL CHARACTERISTICS
(Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCES BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat...
