• Part: GI60L02
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Manufacturer: GTM
  • Size: 268.88 KB
Download GI60L02 Datasheet PDF
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Datasheet Summary

.. Pb Free Plating Product ISSUED DATE :2005/02/22 REVISED DATE :2005/12/12B Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 13m 50A The GI60L02 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features - Simple Drive Requirement - Low Gate Charge - Fast Switching Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L...