GI9435 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GI9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GI9435

Datasheet Details

Part number	GI9435
Manufacturer	GTM
File Size	250.29 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI9435 Datasheet
Additional preview pages of the GI9435 datasheet.

Product details

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50m -20A The GI9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The TO-251 package is universally used for commercial-industrial applications. Simple Drive Requirement Lower Gate Charge Fast Switching

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -30 ±20 -20 -13 -72 31 0.25 -55 ~ +150 Unit V V A A A.

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Published: Sep 4, 2007 |