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GI9435 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Features

  • Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -30 ±20 -20 -13 -72 31 0.25 -55 ~ +150 Unit V V A A A.

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Datasheet preview – GI9435

Datasheet Details

Part number GI9435
Manufacturer GTM
File Size 250.29 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI9435 Datasheet
Additional preview pages of the GI9435 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE : GI9435 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50m -20A The GI9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-251 package is universally used for commercial-industrial applications. *Simple Drive Requirement *Lower Gate Charge *Fast Switching Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.
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