Datasheet4U Logo Datasheet4U.com

GI9916 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Single Drive Requirement Low on-resistance Capable of 2.5V ga

Features

  • Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=125 IDM PD @TC=25 Tj, Tstg Ratings 18 ±12 35 16 90 50 0.4 -55 ~ +150.

📥 Download Datasheet

Datasheet preview – GI9916

Datasheet Details

Part number GI9916
Manufacturer GTM
File Size 297.62 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI9916 Datasheet
Additional preview pages of the GI9916 datasheet.

📁 Similar Datasheet

  • GI910 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI911 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI912 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI914 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI916 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI917 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI965 - NPN EPITAXIAL PLANAR TRANSISTOR (GTM CORPORATION)
Other Datasheets by GTM
  • GI9912 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9915 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9960 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9962 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9971 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9973 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9980 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI90T03 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/03 REVISED DATE : GI9916 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25m 35A The GI9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Single Drive Requirement *Low on-resistance *Capable of 2.5V gate drive *Low drive current Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.
Published: |