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GJ1060 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The GJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching.

Key Features

  • Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max. ) @ IC=3A, IB=0.3A, Package Dimensions TO-252 Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Collector Current (Pulse) ICP Total Device Dissipation (TC=25к) PD Junction Temperature TJ Storage Temperature Tstg REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.

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Datasheet Details

Part number GJ1060
Manufacturer GTM
File Size 423.11 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GJ1060 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : GJ1060 NPN EPITAXIAL PLANAR TRANSISTOR Description The GJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features ԦLow Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A, Package Dimensions TO-252 Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Collector Current (Pulse) ICP Total Device Dissipation (TC=25к) PD Junction Temperature TJ Storage Temperature Tstg REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF.