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GJ3403 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Features

  • Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=70 IDM PD @TC=25 Tj, Tstg Ratings -30 ±20 -10 -8.6 -48 36.7 0.29 -55.

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Datasheet Details

Part number GJ3403
Manufacturer GTM
File Size 253.88 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GJ3403 Datasheet
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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GJ3403 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200m -10A The GJ3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications. *Simple Drive Requirement *Lower Gate Charge *Fast Switching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
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