• Part: GJ35N03
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Manufacturer: GTM
  • Size: 252.08 KB
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Datasheet Summary

.. Pb Free Plating Product ISSUED DATE :2006/08/16 REVISED DATE : N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 13.5m 36A The GJ35N03 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. - Dynamic dv/dt Rating - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40...