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GJ3669 - PNP EPITAXIAL PLANAR TRANSISTOR

Datasheet Summary

Description

The GJ3669 is designed for using in power amplifier applications, power switching applications.

REF.

Millimeter Min.

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Datasheet Details

Part number GJ3669
Manufacturer GTM
File Size 184.49 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
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www.DataSheet4U.com ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B GJ3669 Description Package Dimensions NPN EPITAXIAL PLANAR T RANSISTOR The GJ3669 is designed for using in power amplifier applications, power switching applications. TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Dissipation (TA=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Ratings 80 80 5 2 1.
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