• Part: GJ60T03
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM
  • Size: 273.46 KB
Download GJ60T03 Datasheet PDF
GTM
GJ60T03
GJ60T03 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description The GJ60T03 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. - Low Gate Charge - Simple Drive Requirement - Fast Switching Speed - Ro HS pliant Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 45 32 120 44 0.352 -55 ~ +175 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 3.4 110 Unit /W /W Page: 1/4 ISSUED DATE :2005/11/24 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 30 1.0 Typ. 0.026 25 11.6 3.9 7 8.8 57.5 18.5 6.4 1135 200 135 Max. 3.0 ±100 1 250 12 25 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=10A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=20A VGS=4.5V, ID=15A ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A VGS=10V RG=3.3 RD=0.75 VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=175 ) VGS(th) gfs IGSS IDSS Static...