GJ772
GJ772 is PNP EPITAXIAL PLANAR TRANSISTOR manufactured by GTM.
Description
P NP EP ITAXI AL PL ANAR T RANSI STOR
The GJ772 is designed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and relay driver.
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Base Current Total Power Dissipation(TC=25 ) Symbol Tj Tstg VCBO VCEO VEBO IC IC IB PD Ratings +150 -55~+150 -40 -30 -5 -3 -7 -0.6 10 Unit
V V V A A A W
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- VBE(sat)
- h FE1
- h FE2 f T Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 80 55
)
Max. -1 -1 -0.5 -2 500 Unit V V V u A u A V V Test Conditions IC=-100u A , IE=0 IC=-1m A, IB=0 IE=-10u A ,IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20m A VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, IE=0, f=1MHz
- Pulse Test: Pulse Width 380 s, Duty Cycle 2%
MHz p F
Classification Of h FE2
Rank Range Q 100
- 200 P 160
- 320
E 250
- 500
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ISSUED DATE :2002/12/13 REVISED DATE :2005/08/10B
Characteristics Curve
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ISSUED DATE :2002/12/13 REVISED DATE :2005/08/10B
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