GTM GJ8050
The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.| Part No. | GJ8050 |
|---|---|
| Datasheet | GJ8050 Download |
| Manufacturer |  GTM |
| Description | NPN EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
NPN EPITAXIAL TRANSISTOR *High Collector current (IC: 1.5A) *Complementary to GJ8550 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20ABSOLUTE MAXIMUM RATINGS
(Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Junction Temperature Storage Temperature Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO VCEO VEBO IC IB Tj TsTG PD 40 25 6 1.5 0.5 +150 -55 ~ +150 1.25 Unit V V V A A WELECTRICAL CHARACTERISTICS
(Rating at 25 Symbol Min. Typ. ambient temperature unless otherwise specified) Unit Test Conditions Max. BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob 40 25 6 45 120 40 100 - 9 100 100 0.5 1.2 1.0 500 - V V V nA nA V V V MHz pF IC=100uA I...