DESCRIPTION
FEATURES
PNP EPITAXIAL TRANSISTOR ISSUED DATE :2005/05/06 REVISED DATE : *High Collector current (IC: 1.5A) *Complementary to GJ8050 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 ABSOLUTE MAXIMUM RATINGS
(Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Base Current Junction Temperature Storage Temperature Range Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +150 TsTG -55 ~ +150 PD 1.25 Unit V V V A A W ELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9 , unless otherwise specified) Max. Unit Test Conditions V IC=-100uA V IC=-2mA V IE=-100uA -...
GTM
