Datasheet4U Logo Datasheet4U.com

GJ85L02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

  • Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 85 53 31.

📥 Download Datasheet

Datasheet Details

Part number GJ85L02
Manufacturer GTM
File Size 276.14 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GJ85L02 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by GTM

Part Number Description
GJ8550 PNP EPITAXIAL TRANSISTOR
GJ85T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ8050 NPN EPITAXIAL TRANSISTOR
GJ80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ80N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/28 REVISED DATE : GJ85L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 6m 85A The GJ85L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Characteristic Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.
Published: |