GTM GJ9435
The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications.| Part No. | GJ9435 |
|---|---|
| Datasheet | GJ9435 Download |
| Manufacturer |  GTM |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
*Simple Drive Requirement *Lower Gate Charge *Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Ratings -30 ±20 -20 -13 -72 31 0.25 -55 ~ +150 Unit V V A A A W W/к к Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 4.0 110 Unit к/W к/W GJ9435 Page: 1/4 ISSUED DATE :2005/02/23 REVISED DATE :ELECTRICAL CHARACTERISTICS
(Tj = 25к unless otherwise specified) Parameter Symbol Min. Typ.
