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GJ9435 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The TO-252 package is universally used for commercial-industrial applications.

Features

  • Simple Drive Requirement.
  • Lower Gate Charge.
  • Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain.

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Datasheet preview – GJ9435

Datasheet Details

Part number GJ9435
Manufacturer GTM
File Size 222.16 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GJ9435 Datasheet
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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE : GJ9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50m -20A Description The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications. Features *Simple Drive Requirement *Lower Gate Charge *Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
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