GJ965 Datasheet | GTM

Description NP N EP ITAX I AL PL ANAR T RANSI STOR The GJ965 is designed for use as AF output amplifier and flash unit. Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10m S) Junction Temperature Storage Temperature Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO 40 VCEO 20 VEBO 7 IC 5 ICP 8 Tj +150 Ts TG -55 ~ +150 PD 2 ) Unit Test Conditions Unit V V V A A W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - h FE1 - h FE2 f T Cob 40 20 7 230 150 - 350 150 - 100 100 1000 800 50 V V V n A n A m V MHz p F IC=100u A IC=1m A IE=10u A VCB=60V VEB=7V l C=3A, IB=100m A VCE=2V, IC=500m A VCE=2V, IC=2A VCE=6V, IE=50m A VCB=20V, f=1MHz - Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of h FE1 Rank Range Q 230 ~ 380 R 340 ~ 600 S 560 ~ 800 Page: 1/2 ISSUED DATE :2005/05/12 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL...