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GJ9960 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

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Datasheet Details

Part number GJ9960
Manufacturer GTM
File Size 232.29 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GJ9960 Datasheet

General Description

The GJ9960 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Overview

Pb Free Plating Product ISSUED DATE :2004/12/21 REVISED DATE : GJ9960 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V.

Key Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@.

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