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GJ9960 Datasheet PDF

GTM GJ9960

The GJ9960 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Part No. GJ9960
Datasheet GJ9960 Download
Manufacturer
GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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GJ9960 datasheet page 1 preview

DESCRIPTION

FEATURES

*Simple Drive Requirement *Low Gate Charge *Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к Operating Junction and Storage Temperature Range Tj, Tstg Linear Derating Factor Ratings 40 ±20 42 26 195 45 -55 ~ +150 0.36 Unit V V A A A W к W/к Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit к/W к/W GJ9960 Page: 1/4 ISSUED DATE :2004/12/21 REVISED DATE :

ELECTRICAL CHARACTERISTICS

(Tj = 25к unless otherwise specified) Parameter Symbol Min.
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