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GL2308 - N-channel Power MOSFET

General Description

The GL2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GL2308 is universally used for all commercial-industrial surface mount applications.

Key Features

  • Simple Drive Requirement.
  • Surface Mount Device Package Dimensions SOT-223 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A C.

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Datasheet Details

Part number GL2308
Manufacturer GTM
File Size 220.02 KB
Description N-channel Power MOSFET
Datasheet download datasheet GL2308 Datasheet

Full PDF Text Transcription for GL2308 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GL2308. For precise diagrams, and layout, please refer to the original PDF.

Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GL2308 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 160m 3A Description The GL2308 utilized...

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ER MOSFET BVDSS RDS(ON) ID 60V 160m 3A Description The GL2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GL2308 is universally used for all commercial-industrial surface mount applications. Features *Simple Drive Requirement *Surface Mount Device Package Dimensions SOT-223 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.