GTM GL358
The GL358 is designed for general purpose switching and amplifier applications.| Part No. | GL358 |
|---|---|
| Datasheet | GL358 Download |
| Manufacturer |  GTM |
| Description | NPN SILICON PLANAR HIGH CURRENT TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
ISSUED DATE :2005/12/28 REVISED DATE : NPN SILICON PLANAR HIGH CURRENT TRANSISTOR 6 Amps continuous current, up to 10Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 200 100 6 6 10 3 Unit V V V A A W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum.ELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min.