GL358 Datasheet | GTM

Description Features ISSUED DATE :2005/12/28 REVISED DATE : NPN SILICON PLANAR HIGH CURRENT TRANSISTOR The GL358 is designed for general purpose switching and amplifier applications. 6 Amps continuous current, up to 10Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 200 100 6 6 10 3 Unit V V V A A W - The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 Symbol BVCBO - BVCEO BVEBO ICBO ICES IEBO - VCE(sat)1 - VCE(sat)2 - VCE(sat)3 - VBE(sat) - VBE(on) - h FE1 - h FE2 - h FE3 - h FE4 f T Cob Min. 200 100 6 100 100 50 20 Typ. 200 130 35 ,unless otherwise stated) Max. Unit Test Conditions V IC=100u A , IE=0 V IC=10m A, IB=0 V IE=100u A ,IC=0 10 n A VCB=150V, IE=0 50 n A VCES=100V 10 n A VEB=6V, IC=0 50 m V IC=100m A, IB=5m A 150 m V IC=2A, IB=100m A 340 m V IC=5A, IB=500m A 1.25 V IC=5A, IB=500m A 1.10 V VCE=2V, IC=5A VCE=2V, IC=10m A 300 VCE=2V, IC=2A VCE=2V, IC=4A VCE=2V, IC=10A MHz VCE=10V, IC=100m A, f=50MHz p F VCB=10V, IE=0, f=1MHz Page: 1/2 CORPORATION ton toff 55 1650 ns 2% - Measured under pulse condition. Pulse width 300 s, Duty Cycle Spice parameter data is available upon request for this device. ISSUED DATE :2005/12/28 REVISED DATE : VCC=10V, IC=1A, IB1=IB2=100m A Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited...