GL359 Datasheet | GTM

Description Features ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL359 is designed for general purpose switching and amplifier applications. 5 Amps continuous current, up to 10Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -140 -100 -6 -5 -10 3 Unit V V V A A W - The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 Symbol BVCBO - BVCEO BVEBO ICBO ICES IEBO - VCE(sat)1 - VCE(sat)2 - VCE(sat)3 - VCE(sat)4 - VBE(sat) - VBE(on) - h FE1 - h FE2 - h FE3 - h FE4 - h FE5 f T Min. -140 -100 -6 100 100 50 30 Typ. -20 -90 -160 -300 -1.01 -0.925 200 200 90 50 15 125 ,unless otherwise stated) Max. Unit Test Conditions V IC=-100u A , IE=0 V IC=-10m A, IB=0 V IE=-100u A ,IC=0 -50 n A VCB=-100V, IE=0 -50 n A VCES=-100V -10 n A VEB=-6V, IC=0 -50 m V IC=-100m A, IB=-10m A -115 m V IC=-1A, IB=-100m A -220 m V IC=-2A, IB=-200m A -420 m V IC=-4A, IB=-400m A -1.17 V IC=-4A, IB=-400m A -1.16 V VCE=-1V, IC=-4A VCE=-1V, IC=-10m A 300 VCE=-1V, IC=-1A VCE=-1V, IC=-3A VCE=-1V, IC=-4A VCE=-1V, IC=-10A MHz VCE=-10V, IC=-100m A, f=50MHz Page: 1/2 CORPORATION Cob ton toff 65 110 460 p F ns 2% ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B VCB=-10V, IE=0, f=1MHz VCC=-10V, IC=-2A, IB1=-200m A, IB2=200m A - Measured under pulse condition. Pulse width 300 s, Duty...