GL772 Datasheet | GTM

Description PNP EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/12/17 REVISED DATE : The GL772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -40 -30 -5.0 -3.0 1.5 V V V A W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) - h FE1 - h FE2 f T Cob at Ta = 25 Min. -40 -30 -5 30 100 Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 500 MHz p F Unit V V V A A V V IC=-100u A IC=-10m A IE=-10u A VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20m A VCE=-2V, IC=-1A VCE=-20V, IC=-20m A, f=100MHz VCB=-10V, f=1MHz - Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of h FE2 Rank Range Q 100-200 P 160-320 E 250-500 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/12/17 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng...