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GLBCX53 - PNP SILICON EPITAXIAL TRANSISTOR

General Description

The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose amplification.

Key Features

  • Package Dimensions Collector-Emitter Voltage: VCEO=-80V Complementary to GLBCP56 SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total P.

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Datasheet Details

Part number GLBCX53
Manufacturer GTM
File Size 267.16 KB
Description PNP SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet GLBCX53 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISSUED DATE :2005/08/18 REVISED DATE :2005/11/21B GLBCX53 Description P N P S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose amplification. Features Package Dimensions Collector-Emitter Voltage: VCEO=-80V Complementary to GLBCP56 SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings http://www.