DESCRIPTION
Package Dimensions PNP EPITAXIAL PLANAR TRANSISTOR SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Unit V V V A A mW mW 2 ABSOLUTE MAXIMUM RATINGS
Ta=25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current at Base current Collector Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PC(Note 1) Ratings +150 -55 ~ +150 -50 -50 -5 -2 -0.4 500 1000 Typ. 120 40 0.1 1.0 0.1 Max. -0.1 -0.1 240 -0.5 -1.2 Unit uA uA V V V MHz Pf s s s Characteristics at Ta = 25 Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf Min. -50 70 20 - Note 1:Mounted on ceramic substrate (250mm x0.8t) Test Conditions VCB=-50V,IE=0 VEB=-5V,Ic=0 IC=-10mA,IB =0 VCE=-2V,Ic=-0.5A VCE=-2V,Ic=-2.0A IC=-1A, IB=-0.05A IC=-1A, IB=-0.05A VCE=...
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