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GM164 - P-channel Power MOSFET

General Description

The GM164 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Fast Switching Package Dimensions SOT-89 REF. A B C D E F Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.

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Datasheet Details

Part number GM164
Manufacturer GTM
File Size 233.53 KB
Description P-channel Power MOSFET
Datasheet download datasheet GM164 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2006/09/11 REVISED DATE : GM164 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 55m -5.3A Description The GM164 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The GM164 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Package Dimensions SOT-89 REF.