DESCRIPTION
1/2 NPN EPITAXIAL PLANAR TRANSISTOR Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 75 40 6.0 600 1.2 V V V mA W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 fT at Ta = 25 Min. 75 40 6 35 50 75 100 40 50 300 Typ. Max. 10 10 50 300 1 1.2 2 300 MHz Unit V V V nA nA nA mV V V V IC=10uA IC=10mA IE=10uA VCB=60V VCB=60V,VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VC...
GTM
