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GM2310 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The GM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GM2310 is universally used for all commercial-industrial surface mount applications.

Key Features

  • Simple Drive Requirement.
  • Small Package Outline Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Di.

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Datasheet Details

Part number GM2310
Manufacturer GTM
File Size 210.62 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GM2310 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GM2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A Description The GM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GM2310 is universally used for all commercial-industrial surface mount applications. Features *Simple Drive Requirement *Small Package Outline Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF.