DESCRIPTION
1/2 NPN EPITAXIAL PLANAR TRANSISTOR Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. ABSOLUTE MAXIMUM RATINGS
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCES VEBO IC PD Ratings +150 -55 ~ +150 180 160 6.0 600 1.2 V V V mA W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob at Ta = 25 Min. 180 160 6 80 80 30 100 Typ. Max. 50 50 150 200 1 1 250 300 6 MHz pF Unit V V V nA nA mV mV V V IC=100uA IC=1mA IE=10uA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IE=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz Test Conditions 2/2 Characteristics Curve Important Notice: All rights are reserved.
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