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GM5551 - NPN EPITAXIAL PLANAR TRANSISTOR

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Description

The GM5551 is designed for for general purpose applications requiring high breakdown voltages.

REF.

Millimeter Min.

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Datasheet Details

Part number GM5551
Manufacturer GTM
File Size 245.51 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
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www.DataSheet4U.com GM5551 Description 1/2 NPN EPITAXIAL PLANAR TRANSISTOR The GM5551 is designed for for general purpose applications requiring high breakdown voltages. Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCES VEBO IC PD Ratings +150 -55 ~ +150 180 160 6.0 600 1.
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