DESCRIPTION
Package Dimension 1/2 NPN EPITAXIAL PLANAR T RANSISTOR REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 40 30 5.0 3.0 1.2 Unit Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 V V V A W Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 FT Cob at Ta = 25 Min. 40 30 5 30 100 Typ. 90 45 Max. 1 1 0.5 2 500 MHz Pf Unit V V V uA uA V V IC=100uA ,IE=0 IC=1mA,IB=0 IE=10uA VCB=30V VEB=3V IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V,IE=0, f=1MHz Test Conditions Classification Of hFE Rank Range Q 100-200 P 160-320 E 250-500 2/2 Characteristics Curve Important Notice: All rights are reserved.
GTM
