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GMBCP56 - NPN SILICON EPITAXIAL TRANSISTOR

Key Features

  • N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GMBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GMBCX53 Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Tem.

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Datasheet Details

Part number GMBCP56
Manufacturer GTM
File Size 177.50 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet GMBCP56 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D GMBCP56 Description Features N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GMBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GMBCX53 Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF.