GMBCP56 Datasheet | GTM

Description Features N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GMBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V plementary to GMBCX53 Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings Unit Tj Ts TG VCBO VCEO VEBO IC PD ) Unit V V V n A n A m V m V +150 -65 ~ +150 100 80 5 1 1.2 V V V A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat)1 - VBE(on) - h FE1 - h FE2 - h FE3 f T Min. 100 80 5 63 63 40 100 Typ. Max. 100 100 500 1000 250 - Test Conditions IC=100u A, IE=0 IC=1m A, IB=0 IE=10u A, IC=0 VCB=30V, IE=0 VEB=5V, IC =0 IC=500m A, IB=50m A IC=500m A, VCE=2V, VCE=2V, IC=5m A VCE=2V, IC=150m A VCE=2V, IC=500m A MHz VCE=5V, IC=10m A - Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of h FE2 Rank Range 10 63 - 160 16 100 - 250 GMCP56 1/2 ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang...