GS1333 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GS1333 P-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GS1333

Datasheet Details

Part number	GS1333
Manufacturer	GTM
File Size	324.45 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GS1333 Datasheet
Additional preview pages of the GS1333 datasheet.

Product details

Description

The GS1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Simple Gate Drive Small Package Outline Fast Switching Speed

Features

Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID.

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Published: Sep 27, 2007 |