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GS1333 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GS1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

Simple Gate Drive Small Package Outline Fast Switching Speed

Features

  • Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID.

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Datasheet Details

Part number GS1333
Manufacturer GTM
File Size 324.45 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GS1333 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : GS1333 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 800m -550mA Description The GS1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *Fast Switching Speed Features Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
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