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GS2N7002K Datasheet PDF

GTM GS2N7002K

The GS2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS2N7002K is universally used for all commercial-industrial applications.
Part No. GS2N7002K
Datasheet GS2N7002K Download
Manufacturer
GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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GS2N7002K datasheet page 1 preview

DESCRIPTION

FEATURES

*Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 60 20 640 500 950 0.35 0.003 -55 ~ +150 Ratings 360 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GS2N7002K Page: 1/4 ISSUED DATE :2005/09/19 REVISED DATE :

ELECTRICAL CHARACTERISTICS

(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
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