GS706SD
GS706SD is SURFACE MOUNT SCHOTTKY BARRIER DIODE manufactured by GTM.
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ISSUED DATE :2004/09/15 REVISED DATE :
Description
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 5 V, C U R R E N T 0 . 0 3 A
Package Dimensions
The GS706SD is designed for general purpose detection and high speed switching.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
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Parameter Junction Temperature Storage Temperature Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3m Sec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD Ratings +125 -40 ~ +125 45 32 40 0.2 2.0 0.03 225 V V V A p F A m W Unit
Characteristics at Ta = 25
Symbol VF IR Typ. 0.37 1.0 Unit V u A Test Condition IF = 1m A VR = 10V
Characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current 2. ESD sensitive product handling required.
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.
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ISSUED DATE :2004/09/15 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City,...
