DESCRIPTION
FEATURES
PNP SILICON TRANSISTOR High Voltage High Speed Switching Low Collector Saturation Voltage D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(pulse)* Total Power Dissipation *pw 2ms, Duty Cycle 50% Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55 ~ +150 -400 -400 -7 -500 -1000 750 V V V mA mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob at Ta = 25 Min. -400 -400 -7 40 20 Typ. 80 40 17 Max. -10 -10 -0.5 -1.2 200 20 MHz pF Unit V V V A A V V IC=-100uA IC=-1mA IE=-100uA VCB=-400V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA V...
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