GSB1386 Overview
The GSB1386 is a epitaxial planar type PNP silicon transistor.
GSB1386 Key Features
- Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). -Excellent DC current gain characteristics. -plements the G
GSB1386 Datasheet Details
| Part number | GSB1386 |
|---|---|
| Datasheet | GSB1386-GTM.pdf |
| File Size | 268.89 KB |
| Manufacturer | GTM |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
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