GSB1386
Description
The GSB1386 is a epitaxial planar type PNP silicon transistor .
Features
- Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A).
- Excellent DC current gain characteristics.
- plements the GSD2098/GSD2118/GSD2097.
Package Dimensions
REF. A
Millimeter
Min. Max.
REF. G
Millimeter Min. Max. 3.00 REF.
B 4.05 4.25 H
1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L M
5q TYP. 0.70 REF.
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-30
Collector to Emitter...
