DESCRIPTION
FEATURES
*Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). *Excellent DC current gain characteristics. *Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L M 5q TYP. 0.70 REF. ABSOLUTE MAXIMUM RATINGS
(Ta = 25к,unless otherwise specified) Parameter Symbol Ratings Unit Junction Temperature Tj +150 ć Storage Temperature Tstg -55 ~ +150 ć Collector to Base Voltage VCBO -30 V Collector to Emitter Voltage VCEO -20 V Emitter to Base Voltage VEBO -6 V Collector Current(DC) -5 A IC Collector Current(PULSE) (note1) -10 A Collector Power Dissipation 0.5 W PD Collector Power Dissipation (note2) 2 W * 1. Single pulse, PW=100ms. * 2 .When mounted on a 40*40*0.7 mm ceramic board. ELECTRICAL CHARACTERISTICS
(Ta = 25к,unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions B...
GTM
