GSB1386 Description
The GSB1386 is a epitaxial planar type PNP silicon transistor.
GSB1386 Key Features
- Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). -Excellent DC current gain characteristics. -plements the G
GSB1386 is PNP EPITAXIAL SILICON TRANSISTOR manufactured by GTM.
The GSB1386 is a epitaxial planar type PNP silicon transistor.