GTM GSBAS40
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DESCRIPTION
Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BCS.ABSOLUTE MAXIMUM RATINGS
at TA = 25 Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Thermal Resistance Junction to Ambient Air Peak Forward Surge Current at tp < 1.0s Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A mW IFSM Io PDELECTRICAL CHARACTERISTICS
(at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF IR CT Trr unless otherwise noted) Min. 40 Typ. Max. 380 1000 200 5.0 5.0 Unit V mV nA pF ns IR=10 A IF1=1mA IF2=40mA VR=30V VR=0V, f=1MHz IF=IR=10mA, RL=100 , Irr=1mA Test Conditions GSBAS40 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/12/20 REVISED DATE : Important Notice: All rights are reserved.